FQA6N80_F109 - MOSFET N-CH 800V 6.3A TO-3P

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 800V 6.3A TO-3P
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
6416 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har FQA6N80_F109 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
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spesifikasjoner for FQA6N80_F109

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : FQA6N80_F109
Produsent : ON Semiconductor
Beskrivelse : MOSFET N-CH 800V 6.3A TO-3P
Serie : QFET®
Delstatus : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 1.95 Ohm @ 3.15A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (maks) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 185W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Through Hole
Leverandørenhetspakke : TO-3P
Pakke / sak : TO-3P-3, SC-65-3
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : FQA6 , FQA6N8

dokumenter for FQA6N80_F109

Dataark : FQA6N80_F109.pdf

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