SI2333DDS-T1-GE3 - MOSFET P-CH 12V 6A SOT23

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET P-CH 12V 6A SOT23
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
2862605 Pieces
Reference Pris
USD 0.09801
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har SI2333DDS-T1-GE3 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for SI2333DDS-T1-GE3

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : SI2333DDS-T1-GE3
Produsent : Vishay Siliconix
Beskrivelse : MOSFET P-CH 12V 6A SOT23
Serie : TrenchFET®
Delstatus : Active
FET Type : P-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 12V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, vgs : 28 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 35nC @ 8V
Vgs (maks) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1275pF @ 6V
FET-funksjon : -
Effektdissipasjon (maks) : 1.2W (Ta), 1.7W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : SOT-23-3 (TO-236)
Pakke / sak : TO-236-3, SC-59, SOT-23-3
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : SI233 , SI2333DD

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