IDB12E120ATMA1 - DIODE GEN PURP 1.2KV 28A TO263-3

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE GEN PURP 1.2KV 28A TO263-3
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
16696 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har IDB12E120ATMA1 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for IDB12E120ATMA1

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : IDB12E120ATMA1
Produsent : Infineon Technologies
Beskrivelse : DIODE GEN PURP 1.2KV 28A TO263-3
Serie : -
Delstatus : Obsolete
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 1200V
Nåværende - Gjennomsnittlig rettet (Io) : 28A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 2.15V @ 12A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 150ns
Nåværende - Omvendt lekkasje @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : -
Monteringstype : Surface Mount
Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandørenhetspakke : PG-TO263-3-2
Driftstemperatur - veikryss : -55°C ~ 150°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : IDB1 , IDB12E1

dokumenter for IDB12E120ATMA1

Dataark : IDB12E120ATMA1.pdf

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