IPD122N10N3GBTMA1 - MOSFET N-CH 100V 59A TO252-3

Produsentens varenummer

IPD122N10N3GBTMA1

Intern delenummer

AX-IPD122N10N3GBTMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 59A TO252-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

15744 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPD122N10N3GBTMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IPD122N10N3GBTMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IPD122N10N3GBTMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 59A TO252-3

Serie : OptiMOS™

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 12.2 mOhm @ 46A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 46µA

Gate Lading (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 94W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-TO252-3

Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IPD12 , IPD122N1

dokumenter for IPD122N10N3GBTMA1

Dataark : IPD122N10N3GBTMA1.pdf

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