1N8026-GA - DIODE SILICON 1.2KV 8A TO257

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE SILICON 1.2KV 8A TO257
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
9368 Pieces
Reference Pris
USD 124.86
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har 1N8026-GA på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for 1N8026-GA

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : 1N8026-GA
Produsent : GeneSiC Semiconductor
Beskrivelse : DIODE SILICON 1.2KV 8A TO257
Serie : -
Delstatus : Obsolete
Diodetype : Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) : 1200V
Nåværende - Gjennomsnittlig rettet (Io) : 8A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.6V @ 2.5A
Hastighet : No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) : 0ns
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 1200V
Capacitance @ Vr, F : 237pF @ 1V, 1MHz
Monteringstype : Through Hole
Pakke / sak : TO-257-3
Leverandørenhetspakke : TO-257
Driftstemperatur - veikryss : -55°C ~ 250°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : 1N8 , 1N80

dokumenter for 1N8026-GA

Dataark : 1N8026-GA.pdf

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