SIHG33N65E-GE3 - MOSFET N-CH 650V 32.4A TO-247AC
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 650V 32.4A TO-247AC
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
59795 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har SIHG33N65E-GE3 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for SIHG33N65E-GE3
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
SIHG33N65E-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 650V 32.4A TO-247AC
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
32.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
105 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
173nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4040pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
313W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247AC
Pakke / sak :
TO-247-3
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for SIHG33N65E-GE3
Dataark :
SIHG33N65E-GE3.pdf
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