CDBJFSC10650-G - DIODE SILICON CARBIDE POWER SCHO
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
DIODE SILICON CARBIDE POWER SCHO
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
79520 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har CDBJFSC10650-G på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for CDBJFSC10650-G
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
CDBJFSC10650-G
Produsent :
Comchip Technology
Beskrivelse :
DIODE SILICON CARBIDE POWER SCHO
Serie :
-
Delstatus :
Active
Diodetype :
Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) :
650V
Nåværende - Gjennomsnittlig rettet (Io) :
10A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.7V @ 10A
Hastighet :
No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) :
0ns
Nåværende - Omvendt lekkasje @ Vr :
100µA @ 650V
Capacitance @ Vr, F :
710pF @ 0V, 1MHz
Monteringstype :
Through Hole
Pakke / sak :
TO-220-2 Full Pack
Leverandørenhetspakke :
TO-220F
Driftstemperatur - veikryss :
-55°C ~ 175°C
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for CDBJFSC10650-G
Dataark :
CDBJFSC10650-G.pdf
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