BSC072N03LDGATMA1 - MOSFET 2N-CH 30V 11.5A 8TDSON
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET 2N-CH 30V 11.5A 8TDSON
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
803265 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har BSC072N03LDGATMA1 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for BSC072N03LDGATMA1
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
BSC072N03LDGATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 30V 11.5A 8TDSON
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.5A
Rds On (Max) @ Id, vgs :
7.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 15V
Kraft - Maks :
57W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-TDSON-8 Dual
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for BSC072N03LDGATMA1
Dataark :
BSC072N03LDGATMA1.pdf
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