BSC072N03LDGATMA1 - MOSFET 2N-CH 30V 11.5A 8TDSON

Produsentens varenummer

BSC072N03LDGATMA1

Intern delenummer

AX-BSC072N03LDGATMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET 2N-CH 30V 11.5A 8TDSON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

803265 Pieces

Reference Pris

~~USD 0.349278~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BSC072N03LDGATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BSC072N03LDGATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BSC072N03LDGATMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET 2N-CH 30V 11.5A 8TDSON

Serie : OptiMOS™

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Logic Level Gate

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 11.5A

Rds On (Max) @ Id, vgs : 7.2 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 41nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 3500pF @ 15V

Kraft - Maks : 57W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-PowerVDFN

Leverandørenhetspakke : PG-TDSON-8 Dual

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BSC07 , BSC072N0

dokumenter for BSC072N03LDGATMA1

Dataark : BSC072N03LDGATMA1.pdf

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