IPP086N10N3GXKSA1 - MOSFET N-CH 100V 80A TO220-3

Produsentens varenummer

IPP086N10N3GXKSA1

Intern delenummer

AX-IPP086N10N3GXKSA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 80A TO220-3

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

252760 Pieces

Reference Pris

~~USD 1.11~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPP086N10N3GXKSA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IPP086N10N3GXKSA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IPP086N10N3GXKSA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 80A TO220-3

Serie : OptiMOS™

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 8.6 mOhm @ 73A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 75µA

Gate Lading (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3980pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 125W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : PG-TO220-3

Pakke / sak : TO-220-3

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IPP08 , IPP086N1

dokumenter for IPP086N10N3GXKSA1

Dataark : IPP086N10N3GXKSA1.pdf

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