SI6467BDQ-T1-GE3 - MOSFET P-CH 12V 6.8A 8TSSOP

Produsentens varenummer

SI6467BDQ-T1-GE3

Intern delenummer

AX-SI6467BDQ-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 12V 6.8A 8TSSOP

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

10696 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SI6467BDQ-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spesifikasjoner for SI6467BDQ-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI6467BDQ-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET P-CH 12V 6.8A 8TSSOP

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 12V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 6.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, vgs : 12.5 mOhm @ 8A, 4.5V

Vgs (th) (Max) @ Id : 850mV @ 450µA

Gate Lading (Qg) (Max) @ Vgs : 70nC @ 4.5V

Vgs (maks) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : -

FET-funksjon : -

Effektdissipasjon (maks) : 1.05W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-TSSOP

Pakke / sak : 8-TSSOP (0.173", 4.40mm Width)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI646 , SI6467BD

dokumenter for SI6467BDQ-T1-GE3

Dataark : SI6467BDQ-T1-GE3.pdf

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