EPC2103ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
GAN TRANS 2N-CH 80V BUMPED DIE
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
28483 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har EPC2103ENG på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for EPC2103ENG

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : EPC2103ENG
Produsent : EPC
Beskrivelse : GAN TRANS 2N-CH 80V BUMPED DIE
Serie : eGaN®
Delstatus : Active
FET Type : 2 N-Channel (Half Bridge)
FET-funksjon : GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) : 80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 23A
Rds On (Max) @ Id, vgs : 5.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 7mA
Gate Lading (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V
Kraft - Maks : -
Driftstemperatur : -40°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Pakke / sak : Die
Leverandørenhetspakke : Die
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : EPC , EPC21

dokumenter for EPC2103ENG

Dataark : EPC2103ENG.pdf

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