CDBJSC10650-G - DIODE SILICON CARBIDE POWER SCHO

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
DIODE SILICON CARBIDE POWER SCHO
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
97005 Pieces
Reference Pris
USD 2.892
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har CDBJSC10650-G på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for CDBJSC10650-G

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : CDBJSC10650-G
Produsent : Comchip Technology
Beskrivelse : DIODE SILICON CARBIDE POWER SCHO
Serie : -
Delstatus : Active
Diodetype : Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) : 650V
Nåværende - Gjennomsnittlig rettet (Io) : 10A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.7V @ 10A
Hastighet : No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) : 0ns
Nåværende - Omvendt lekkasje @ Vr : 100µA @ 650V
Capacitance @ Vr, F : 710pF @ 0V, 1MHz
Monteringstype : Through Hole
Pakke / sak : TO-220-2 Full Pack
Leverandørenhetspakke : TO-220F
Driftstemperatur - veikryss : -55°C ~ 175°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : CDBJ , CDBJSC

dokumenter for CDBJSC10650-G

Dataark : CDBJSC10650-G.pdf

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