IPG20N10S4L22ATMA1 - MOSFET 2N-CH 8TDSON

Produsentens varenummer

IPG20N10S4L22ATMA1

Intern delenummer

AX-IPG20N10S4L22ATMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET 2N-CH 8TDSON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

606670 Pieces

Reference Pris

~~USD 0.462462~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPG20N10S4L22ATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IPG20N10S4L22ATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IPG20N10S4L22ATMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET 2N-CH 8TDSON

Serie : Automotive, AEC-Q101, OptiMOS™

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Logic Level Gate

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 20A

Rds On (Max) @ Id, vgs : 22 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 25µA

Gate Lading (Qg) (Max) @ Vgs : 27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1755pF @ 25V

Kraft - Maks : 60W

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-PowerVDFN

Leverandørenhetspakke : PG-TDSON-8-4

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IPG20N , IPG20N10S

dokumenter for IPG20N10S4L22ATMA1

Dataark : IPG20N10S4L22ATMA1.pdf

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