SI5980DU-T1-GE3 - MOSFET 2N-CH 100V 2.5A CHIPFET

Produsentens varenummer

SI5980DU-T1-GE3

Intern delenummer

AX-SI5980DU-T1-GE3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 100V 2.5A CHIPFET

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

27657 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SI5980DU-T1-GE3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SI5980DU-T1-GE3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SI5980DU-T1-GE3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 100V 2.5A CHIPFET

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : 2 N-Channel (Dual)

FET-funksjon : Standard

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 2.5A

Rds On (Max) @ Id, vgs : 567 mOhm @ 400mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 3.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 78pF @ 50V

Kraft - Maks : 7.8W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : PowerPAK® ChipFET™ Dual

Leverandørenhetspakke : PowerPAK® ChipFet Dual

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SI598 , SI5980D

dokumenter for SI5980DU-T1-GE3

Dataark : SI5980DU-T1-GE3.pdf

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