SI1026X-T1-GE3 - MOSFET 2N-CH 60V 0.305A SC89-6

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET 2N-CH 60V 0.305A SC89-6
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
2809795 Pieces
Reference Pris
USD 0.099852
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har SI1026X-T1-GE3 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for SI1026X-T1-GE3

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : SI1026X-T1-GE3
Produsent : Vishay Siliconix
Beskrivelse : MOSFET 2N-CH 60V 0.305A SC89-6
Serie : -
Delstatus : Active
FET Type : 2 N-Channel (Dual)
FET-funksjon : Logic Level Gate
Drenering til kildespenning (Vdss) : 60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 305mA
Rds On (Max) @ Id, vgs : 1.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 30pF @ 25V
Kraft - Maks : 250mW
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Pakke / sak : SOT-563, SOT-666
Leverandørenhetspakke : SC-89-6
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : SI10 , SI1026X

dokumenter for SI1026X-T1-GE3

Dataark : SI1026X-T1-GE3.pdf

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