DMN3009SFGQ-7 - MOSFET N-CH 30VPOWERDI3333-8

Produsentens varenummer
Intern delenummer
Kort beskrivelse
MOSFET N-CH 30VPOWERDI3333-8
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
955345 Pieces
Reference Pris
USD 0.293676
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har DMN3009SFGQ-7 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for DMN3009SFGQ-7

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : DMN3009SFGQ-7
Produsent : Diodes Incorporated
Beskrivelse : MOSFET N-CH 30VPOWERDI3333-8
Serie : Automotive, AEC-Q101
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, vgs : 5.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2nF @ 15V
FET-funksjon : -
Effektdissipasjon (maks) : 900mW (Ta)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : PowerDI3333-8
Pakke / sak : 8-PowerVDFN
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : DMN3 , DMN300

dokumenter for DMN3009SFGQ-7

Dataark : DMN3009SFGQ-7.pdf

Relaterte produkter DMN3009SFGQ-7 Diodes Incorporated

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