BSB012N03LX3 G - MOSFET N-CH 30V 180A 2WDSON

Produsentens varenummer

BSB012N03LX3 G

Intern delenummer

AX-BSB012N03LX3 G

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 30V 180A 2WDSON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

15760 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BSB012N03LX3 G på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BSB012N03LX3 G

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BSB012N03LX3 G

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 30V 180A 2WDSON

Serie : OptiMOS™

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 39A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 1.2 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 169nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 16900pF @ 15V

FET-funksjon : -

Effektdissipasjon (maks) : 2.8W (Ta), 89W (Tc)

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : MG-WDSON-2, CanPAK M™

Pakke / sak : 3-WDSON

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BSB0 , BSB012N

dokumenter for BSB012N03LX3 G

Dataark : BSB012N03LX3 G.pdf

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