CDBGBSC201200-G - DIODE DUAL SILICON CARBIDE POWER

Produsentens varenummer

CDBGBSC201200-G

Intern delenummer

AX-CDBGBSC201200-G

Produsent

Comchip Technology

Kort beskrivelse

DIODE DUAL SILICON CARBIDE POWER

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

41328 Pieces

Reference Pris

~~USD 8.144388~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har CDBGBSC201200-G på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for CDBGBSC201200-G

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : CDBGBSC201200-G

Produsent : Comchip Technology

Beskrivelse : DIODE DUAL SILICON CARBIDE POWER

Serie : -

Delstatus : Active

Diodekonfigurasjon : 1 Pair Common Cathode

Diodetype : Silicon Carbide Schottky

Spenning - DC Reverse (Vr) (Max) : 1200V

Nåværende - Gjennomsnittlig rettet (Io) (per diode) : 25.9A (DC)

Spenning - Fremover (Vf) (Maks) @ Hvis : 1.8V @ 10A

Hastighet : No Recovery Time > 500mA (Io)

Omvendt gjenopprettingstid (trr) : 0ns

Nåværende - Omvendt lekkasje @ Vr : 100µA @ 1200V

Driftstemperatur - veikryss : -55°C ~ 175°C

Monteringstype : Through Hole

Pakke / sak : TO-247-3

Leverandørenhetspakke : TO-247

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : CDBGB , CDBGBSC

dokumenter for CDBGBSC201200-G

Dataark : CDBGBSC201200-G.pdf

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