SI4896DY-T1-E3 - MOSFET N-CH 80V 6.7A 8-SOIC

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 80V 6.7A 8-SOIC
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
568545 Pieces
Reference Pris
USD 0.493476
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har SI4896DY-T1-E3 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for SI4896DY-T1-E3

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : SI4896DY-T1-E3
Produsent : Vishay Siliconix
Beskrivelse : MOSFET N-CH 80V 6.7A 8-SOIC
Serie : TrenchFET®
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, vgs : 16.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA (Min)
Gate Lading (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET-funksjon : -
Effektdissipasjon (maks) : 1.56W (Ta)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : 8-SO
Pakke / sak : 8-SOIC (0.154", 3.90mm Width)
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : SI48 , SI4896D

dokumenter for SI4896DY-T1-E3

Dataark : SI4896DY-T1-E3.pdf

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