SIE836DF-T1-E3 - MOSFET N-CH 200V 18.3A POLARPAK

Produsentens varenummer

SIE836DF-T1-E3

Intern delenummer

AX-SIE836DF-T1-E3

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 200V 18.3A POLARPAK

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

11904 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SIE836DF-T1-E3 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SIE836DF-T1-E3

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SIE836DF-T1-E3

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CH 200V 18.3A POLARPAK

Serie : TrenchFET®

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 200V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 18.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 130 mOhm @ 4.1A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (maks) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 100V

FET-funksjon : -

Effektdissipasjon (maks) : 5.2W (Ta), 104W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 10-PolarPAK® (SH)

Pakke / sak : 10-PolarPAK® (SH)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SIE8 , SIE836D

dokumenter for SIE836DF-T1-E3

Dataark : SIE836DF-T1-E3.pdf

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