RN1705JE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ESV

Produsentens varenummer
Intern delenummer
Kort beskrivelse
TRANS 2NPN PREBIAS 0.1W ESV
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
5301660 Pieces
Reference Pris
USD 0.05292
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har RN1705JE(TE85L,F) på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for RN1705JE(TE85L,F)

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : RN1705JE(TE85L,F)
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : TRANS 2NPN PREBIAS 0.1W ESV
Serie : -
Delstatus : Active
Transistortype : 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 2.2 kOhms
Motstand - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) : 100nA (ICBO)
Frekvens - overgang : 250MHz
Kraft - Maks : 100mW
Monteringstype : Surface Mount
Pakke / sak : SOT-553
Leverandørenhetspakke : ESV
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : RN170 , RN1705JE

dokumenter for RN1705JE(TE85L,F)

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