IRFD123PBF - MOSFET N-CH 100V 1.3A 4-DIP

Produsentens varenummer

IRFD123PBF

Intern delenummer

AX-IRFD123PBF

Produsent

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 100V 1.3A 4-DIP

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

759095 Pieces

Reference Pris

~~USD 0.3696~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IRFD123PBF på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IRFD123PBF

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IRFD123PBF

Produsent : Vishay Siliconix

Beskrivelse : MOSFET N-CH 100V 1.3A 4-DIP

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 270 mOhm @ 780mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 1.3W (Ta)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : 4-DIP, Hexdip, HVMDIP

Pakke / sak : 4-DIP (0.300", 7.62mm)

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IRF , IRFD1

dokumenter for IRFD123PBF

Dataark : IRFD123PBF.pdf

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