IPP80R1K4P7XKSA1 - MOSFET N-CH 800V 4A TO220

Produsentens varenummer

IPP80R1K4P7XKSA1

Intern delenummer

AX-IPP80R1K4P7XKSA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 800V 4A TO220

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

322480 Pieces

Reference Pris

~~USD 0.87~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IPP80R1K4P7XKSA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IPP80R1K4P7XKSA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IPP80R1K4P7XKSA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 800V 4A TO220

Serie : CoolMOS™

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 800V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.4 Ohm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 70µA

Gate Lading (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 250pF @ 500V

FET-funksjon : Super Junction

Effektdissipasjon (maks) : 32W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : PG-TO220-3

Pakke / sak : TO-220-3

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IPP80 , IPP80R1K

dokumenter for IPP80R1K4P7XKSA1

Dataark : IPP80R1K4P7XKSA1.pdf

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