DMN10H170SFG-13 - MOSFET N-CH 100V 2.9A POWERDI

Produsentens varenummer
Intern delenummer
Kort beskrivelse
MOSFET N-CH 100V 2.9A POWERDI
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
2137630 Pieces
Reference Pris
USD 0.13125
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har DMN10H170SFG-13 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for DMN10H170SFG-13

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : DMN10H170SFG-13
Produsent : Diodes Incorporated
Beskrivelse : MOSFET N-CH 100V 2.9A POWERDI
Serie : -
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, vgs : 122 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 14.9nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 870.7pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 940mW (Ta)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : PowerDI3333-8
Pakke / sak : 8-PowerWDFN
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : DMN10 , DMN10H1

dokumenter for DMN10H170SFG-13

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