BSZ12DN20NS3GATMA1 - MOSFET N-CH 200V 11.3A 8TSDSON

Produsentens varenummer

BSZ12DN20NS3GATMA1

Intern delenummer

AX-BSZ12DN20NS3GATMA1

Produsent

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 200V 11.3A 8TSDSON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

895295 Pieces

Reference Pris

~~USD 0.313374~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BSZ12DN20NS3GATMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BSZ12DN20NS3GATMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BSZ12DN20NS3GATMA1

Produsent : Infineon Technologies

Beskrivelse : MOSFET N-CH 200V 11.3A 8TSDSON

Serie : OptiMOS™

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 200V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 11.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 125 mOhm @ 5.7A, 10V

Vgs (th) (Max) @ Id : 4V @ 25µA

Gate Lading (Qg) (Max) @ Vgs : 8.7nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 680pF @ 100V

FET-funksjon : -

Effektdissipasjon (maks) : 50W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-TSDSON-8

Pakke / sak : 8-PowerTDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BSZ12D , BSZ12DN20

dokumenter for BSZ12DN20NS3GATMA1

Dataark : BSZ12DN20NS3GATMA1.pdf

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