TPN4R712MD,L1Q - MOSFET P-CH 20V 36A 8TSON ADV

Produsentens varenummer

TPN4R712MD,L1Q

Intern delenummer

AX-TPN4R712MD,L1Q

Produsent

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET P-CH 20V 36A 8TSON ADV

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1712845 Pieces

Reference Pris

~~USD 0.1638~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har TPN4R712MD,L1Q på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for TPN4R712MD,L1Q

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : TPN4R712MD,L1Q

Produsent : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET P-CH 20V 36A 8TSON ADV

Serie : U-MOSVI

Delstatus : Active

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 20V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, vgs : 4.7 mOhm @ 18A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 1mA

Gate Lading (Qg) (Max) @ Vgs : 65nC @ 5V

Vgs (maks) : ±12V

Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 10V

FET-funksjon : -

Effektdissipasjon (maks) : 42W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-TSON Advance (3.3x3.3)

Pakke / sak : 8-PowerVDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : TPN4 , TPN4R71

dokumenter for TPN4R712MD,L1Q

Dataark : TPN4R712MD,L1Q.pdf

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