SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650

Produsentens varenummer

SCTW90N65G2V

Intern delenummer

AX-SCTW90N65G2V

Produsent

STMicroelectronics

Kort beskrivelse

SILICON CARBIDE POWER MOSFET 650

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

12424 Pieces

Reference Pris

~~USD 36.09~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har SCTW90N65G2V på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for SCTW90N65G2V

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : SCTW90N65G2V

Produsent : STMicroelectronics

Beskrivelse : SILICON CARBIDE POWER MOSFET 650

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : SiCFET (Silicon Carbide)

Drenering til kildespenning (Vdss) : 650V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, vgs : 25 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (maks) : +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V

FET-funksjon : -

Effektdissipasjon (maks) : 390W (Tc)

Driftstemperatur : -55°C ~ 200°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : HiP247™

Pakke / sak : TO-247-3

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : SCTW , SCTW90

dokumenter for SCTW90N65G2V

Dataark : SCTW90N65G2V.pdf

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