GB01SLT12-252 - DIODE SILICON 1.2KV 1A TO252

Produsentens varenummer
Intern delenummer
Kort beskrivelse
DIODE SILICON 1.2KV 1A TO252
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
362970 Pieces
Reference Pris
USD 0.77295
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har GB01SLT12-252 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for GB01SLT12-252

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : GB01SLT12-252
Produsent : GeneSiC Semiconductor
Beskrivelse : DIODE SILICON 1.2KV 1A TO252
Serie : -
Delstatus : Active
Diodetype : Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) : 1200V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.8V @ 1A
Hastighet : No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) : 0ns
Nåværende - Omvendt lekkasje @ Vr : 2µA @ 1200V
Capacitance @ Vr, F : 69pF @ 1V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : TO-252-3, DPak (2 Leads + Tab), SC-63
Leverandørenhetspakke : TO-252
Driftstemperatur - veikryss : -55°C ~ 175°C
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : GB01 , GB01SL

dokumenter for GB01SLT12-252

Dataark : GB01SLT12-252.pdf

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