DMN10H099SFG-13 - MOSFET N-CH 100V 4.2A

Produsentens varenummer

DMN10H099SFG-13

Intern delenummer

AX-DMN10H099SFG-13

Produsent

Diodes Incorporated

Kort beskrivelse

MOSFET N-CH 100V 4.2A

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

1578790 Pieces

Reference Pris

~~USD 0.177708~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har DMN10H099SFG-13 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for DMN10H099SFG-13

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : DMN10H099SFG-13

Produsent : Diodes Incorporated

Beskrivelse : MOSFET N-CH 100V 4.2A

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 80 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 25.2nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 1172pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 980mW (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PowerDI3333-8

Pakke / sak : 8-PowerWDFN

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : DMN10 , DMN10H0

dokumenter for DMN10H099SFG-13

Dataark : DMN10H099SFG-13.pdf

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