BSZ0910NDXTMA1 - DIFFERENTIATED MOSFETS

Produsentens varenummer

BSZ0910NDXTMA1

Intern delenummer

AX-BSZ0910NDXTMA1

Produsent

Infineon Technologies

Kort beskrivelse

DIFFERENTIATED MOSFETS

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

859425 Pieces

Reference Pris

~~USD 0.326454~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har BSZ0910NDXTMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for BSZ0910NDXTMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : BSZ0910NDXTMA1

Produsent : Infineon Technologies

Beskrivelse : DIFFERENTIATED MOSFETS

Serie : OptiMOS™

Delstatus : Active

FET Type : 2 N-Channel (Dual)

FET-funksjon : Logic Level Gate, 4.5V Drive

Drenering til kildespenning (Vdss) : 30V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 9.5A (Ta), 25A (Tc)

Rds On (Max) @ Id, vgs : 9.5 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 5.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 15V

Kraft - Maks : 1.9W (Ta), 31W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / sak : 8-PowerVDFN

Leverandørenhetspakke : PG-WISON-8

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : BSZ0 , BSZ0910

dokumenter for BSZ0910NDXTMA1

Dataark : BSZ0910NDXTMA1.pdf

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