BSZ0910NDXTMA1 - DIFFERENTIATED MOSFETS
Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
DIFFERENTIATED MOSFETS
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
859425 Pieces
Reference Pris
Vår pris
- (Ta kontakt med oss for en bedre pris: [email protected])
- AX Semiconductor har BSZ0910NDXTMA1 på lager for selger.
- Frakt alternativer og shipping tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsalternativer:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasjoner for BSZ0910NDXTMA1
Kvalitets garanti :
365 dagers garanti
Stock Resource :
Franchise distributør / produsent Direct
Opprinnelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer :
BSZ0910NDXTMA1
Produsent :
Infineon Technologies
Beskrivelse :
DIFFERENTIATED MOSFETS
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate, 4.5V Drive
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 15V
Kraft - Maks :
1.9W (Ta), 31W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-WISON-8
Vekt :
-
Betingelse :
Nytt og originalt
dokumenter for BSZ0910NDXTMA1
Dataark :
BSZ0910NDXTMA1.pdf
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