IGLD60R070D1AUMA1 - IC GAN FET 600V 60A 8SON

Produsentens varenummer

IGLD60R070D1AUMA1

Intern delenummer

AX-IGLD60R070D1AUMA1

Produsent

Infineon Technologies

Kort beskrivelse

IC GAN FET 600V 60A 8SON

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

41041 Pieces

Reference Pris

~~USD 9.569868~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har IGLD60R070D1AUMA1 på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for IGLD60R070D1AUMA1

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : IGLD60R070D1AUMA1

Produsent : Infineon Technologies

Beskrivelse : IC GAN FET 600V 60A 8SON

Serie : CoolGaN™

Delstatus : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Drenering til kildespenning (Vdss) : 600V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 2.6mA

Gate Lading (Qg) (Max) @ Vgs : -

Vgs (maks) : -10V

Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 400V

FET-funksjon : -

Effektdissipasjon (maks) : 114W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : PG-LSON-8-1

Pakke / sak : 8-LDFN Exposed Pad

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : IGLD6 , IGLD60R0

dokumenter for IGLD60R070D1AUMA1

Dataark : IGLD60R070D1AUMA1.pdf

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