GP2M002A065HG - MOSFET N-CH 650V 1.8A TO220

Produsentens varenummer
Intern delenummer
Kort beskrivelse
MOSFET N-CH 650V 1.8A TO220
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
21000 Pieces
Reference Pris
USD 0
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har GP2M002A065HG på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for GP2M002A065HG

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : GP2M002A065HG
Produsent : Global Power Technologies Group
Beskrivelse : MOSFET N-CH 650V 1.8A TO220
Serie : -
Delstatus : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 4.6 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs : 8.5nC @ 10V
Vgs (maks) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 353pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 52W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Through Hole
Leverandørenhetspakke : TO-220
Pakke / sak : TO-220-3
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : GP2M , GP2M00

dokumenter for GP2M002A065HG

Dataark : GP2M002A065HG.pdf

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