JAN1N5552US - DIODE GEN PURP 600V 3A B-MELF

Produsentens varenummer

JAN1N5552US

Intern delenummer

AX-JAN1N5552US

Produsent

Microsemi Corporation

Kort beskrivelse

DIODE GEN PURP 600V 3A B-MELF

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

21973 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har JAN1N5552US på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for JAN1N5552US

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : JAN1N5552US

Produsent : Microsemi Corporation

Beskrivelse : DIODE GEN PURP 600V 3A B-MELF

Serie : Military, MIL-PRF-19500/420

Delstatus : Discontinued at Digi-Key

Diodetype : Standard

Spenning - DC Reverse (Vr) (Max) : 600V

Nåværende - Gjennomsnittlig rettet (Io) : 3A

Spenning - Fremover (Vf) (Maks) @ Hvis : 1.2V @ 9A

Hastighet : Standard Recovery >500ns, > 200mA (Io)

Omvendt gjenopprettingstid (trr) : 2µs

Nåværende - Omvendt lekkasje @ Vr : 1µA @ 600V

Capacitance @ Vr, F : -

Monteringstype : Surface Mount

Pakke / sak : SQ-MELF, B

Leverandørenhetspakke : D-5B

Driftstemperatur - veikryss : -65°C ~ 175°C

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : JAN , JAN1N

dokumenter for JAN1N5552US

Dataark : JAN1N5552US.pdf

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