GP1M010A080N - MOSFET N-CH 900V 10A TO3PN

Produsentens varenummer

GP1M010A080N

Intern delenummer

AX-GP1M010A080N

Produsent

Global Power Technologies Group

Kort beskrivelse

MOSFET N-CH 900V 10A TO3PN

RoHS Status

Blyfri / RoHS

Leveringstid

1-2 dager

tilgjengelig Antall

20952 Pieces

Reference Pris

~~USD 0~~

Vår pris

- (Ta kontakt med oss for en bedre pris: [email protected])

AX Semiconductor har GP1M010A080N på lager for selger.

Frakt alternativer og shipping tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsalternativer:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasjoner for GP1M010A080N

Kvalitets garanti : 365 dagers garanti

Stock Resource : Franchise distributør / produsent Direct

Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Delenummer : GP1M010A080N

Produsent : Global Power Technologies Group

Beskrivelse : MOSFET N-CH 900V 10A TO3PN

Serie : -

Delstatus : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 900V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.05 Ohm @ 5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 53nC @ 10V

Vgs (maks) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 2336pF @ 25V

FET-funksjon : -

Effektdissipasjon (maks) : 312W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandørenhetspakke : TO-3PN

Pakke / sak : TO-3P-3, SC-65-3

Vekt : -

Betingelse : Nytt og originalt

Relaterte linker : GP1M , GP1M01

dokumenter for GP1M010A080N

Dataark : GP1M010A080N.pdf

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