RQ3E100MNTB1 - MOSFET N-CH 30V 10A HSMT8

Produsentens varenummer
Intern delenummer
Produsent
Kort beskrivelse
MOSFET N-CH 30V 10A HSMT8
RoHS Status
Blyfri / RoHS
Leveringstid
1-2 dager
tilgjengelig Antall
1113340 Pieces
Reference Pris
USD 0.252
Vår pris
- (Ta kontakt med oss ​​for en bedre pris: [email protected])

AX Semiconductor har RQ3E100MNTB1 på lager for selger.
Frakt alternativer og shipping tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsalternativer:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasjoner for RQ3E100MNTB1

Kvalitets garanti : 365 dagers garanti
Stock Resource : Franchise distributør / produsent Direct
Opprinnelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Delenummer : RQ3E100MNTB1
Produsent : Rohm Semiconductor
Beskrivelse : MOSFET N-CH 30V 10A HSMT8
Serie : -
Delstatus : Not For New Designs
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, vgs : 12.3 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs : 9.9nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 15V
FET-funksjon : -
Effektdissipasjon (maks) : 2W (Ta)
Driftstemperatur : 150°C (TJ)
Monteringstype : Surface Mount
Leverandørenhetspakke : 8-HSMT (3.2x3)
Pakke / sak : 8-PowerVDFN
Vekt : -
Betingelse : Nytt og originalt
Relaterte linker : RQ3E , RQ3E10

dokumenter for RQ3E100MNTB1

Dataark : RQ3E100MNTB1.pdf

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